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?2005 fairchild semiconductor corporation 1 www.fairchildsemi.com fsbs15ch60 rev. c fsbs15ch60 smart power module april 2005 spm tm fsbs15ch60 smart power module features ? ul certified no.e209204(spm27-ba package) ? 600v-15a 3-phase igbt inverter bridge including control ics for gate driving and protection ? divided negative dc-link terminals for inverter current sensing applications ? single-grounded power supply due to built-in hvic ? isolation rating of 2500vrms/min. ? very low leakage current due to using ceramic substrate applications ? ac 100v ~ 253v three-phase inverter drive for small power ac motor drives ? home appliances applications like air conditioner and wash- ing machine. general description it is an advanced smart power module (spm tm ) that fairchild has newly developed and designed to provide very compact and high performance ac motor drives mainly targeting low- power inverter-driven application like air conditioner and wash- ing machine. it combines optimized circuit protection and drive matched to low-loss igbts. system reliability is further enhanced by the integrated under-voltage lock-out and short- circuit protection. the high speed built-in hvic provides opto- coupler-less single-supply igbt gate driving capability that fur- ther reduce the overall size of the inverter system design. each phase current of inverter can be monitored separately due to the divided negative dc terminals. bottom view top view 26.8mm 44mm bottom view top view 26.8mm 44mm figure 1.
2 www.fairchildsemi.com fsbs15ch60 rev. c fsbs15ch60 smart power module integrated power functions ? 600v-15a igbt inverter for three-phase dc/ac power conversion (please refer to figure 3) integrated drive, protection and system control functions ? for inverter high-side igbts: gate drive circuit, high voltage isolated high-speed level shifting control circuit under-voltage (uv) protection note) available bootstrap circuit example is given in figures 10 and 11. ? for inverter low-side igbts: gate drive circuit, short circuit protection (sc) control supply circuit under-voltage (uv) protection ? fault signaling: corresponding to a uv fault (low-side supply) ? input interface: 3.3/5v cmos/lsttl compatible, schmitt trigger input pin configuration figure 2. (1) v cc(l) (2) com (3) in (ul) (4) in (vl) (5) in (wl) (6) v fo (21) n u (22) n v (23) n w (27) p (15) v b(v) (16) v s(v) (17) in (wh) (18) v cc(wh) (19) v b(w) (20) v s(w) (24) u (25) v (26) w case temperature (t c ) detecting point ceramic substrate (7) c fod (8) c sc (9) in (uh) (10) v cc(uh) (11) v b(u) (12) v s(u) (13) in (vh) (14) v cc(vh) (1) v cc(l) (2) com (3) in (ul) (4) in (vl) (5) in (wl) (6) v fo (21) n u (22) n v (23) n w (27) p (15) v b(v) (16) v s(v) (17) in (wh) (18) v cc(wh) (19) v b(w) (20) v s(w) u v (26) w case temperature (t c ) detecting point ceramic substrate (7) c fod (8) c sc (9) in (uh) (10) v cc(uh) (11) v b(u) (12) v s(u) (13) in (vh) (14) v cc(vh) 13.3 19.1 (1) v cc(l) (2) com (3) in (ul) (4) in (vl) (5) in (wl) (6) v fo (21) n u (22) n v (23) n w (27) p (15) v b(v) (16) v s(v) (17) in (wh) (18) v cc(wh) (19) v b(w) (20) v s(w) (24) u (25) v (26) w case temperature (t c ) detecting point ceramic substrate (7) c fod (8) c sc (9) in (uh) (10) v cc(uh) (11) v b(u) (12) v s(u) (13) in (vh) (14) v cc(vh) (1) v cc(l) (2) com (3) in (ul) (4) in (vl) (5) in (wl) (6) v fo (21) n u (22) n v (23) n w (27) p (15) v b(v) (16) v s(v) (17) in (wh) (18) v cc(wh) (19) v b(w) (20) v s(w) u v (26) w case temperature (t c ) detecting point ceramic substrate (7) c fod (8) c sc (9) in (uh) (10) v cc(uh) (11) v b(u) (12) v s(u) (13) in (vh) (14) v cc(vh) 13.3 19.1 13.3 19.1 top view
3 www.fairchildsemi.com fsbs15ch60 rev. c fsbs15ch60 smart power module pin descriptions pin number pin name pin description 1v cc(l) low-side common bias voltage for ic and igbts driving 2 com common supply ground 3in (ul) signal input for low-side u phase 4in (vl) signal input for low-side v phase 5in (wl) signal input for low-side w phase 6v fo fault output 7c fod capacitor for fault output duration time selection 8c sc capacitor (low-pass filter) for short-current detection input 9in (uh) signal input for high-side u phase 10 v cc(uh) high-side bias voltage for u phase ic 11 v b(u) high-side bias voltage for u phase igbt driving 12 v s(u) high-side bias voltage ground for u phase igbt driving 13 in (vh) signal input for high-side v phase 14 v cc(vh) high-side bias voltage for v phase ic 15 v b(v) high-side bias voltage for v phase igbt driving 16 v s(v) high-side bias voltage ground for v phase igbt driving 17 in (wh) signal input for high-side w phase 18 v cc(wh) high-side bias voltage for w phase ic 19 v b(w) high-side bias voltage for w phase igbt driving 20 v s(w) high-side bias voltage ground for w phase igbt driving 21 n u negative dc?link input for u phase 22 n v negative dc?link input for v phase 23 n w negative dc?link input for w phase 24 u output for u phase 25 v output for v phase 26 w output for w phase 27 p positive dc?link input
4 www.fairchildsemi.com fsbs15ch60 rev. c fsbs15ch60 smart power module internal equivalent circuit and input/output pins note: 1. inverter low-side is composed of three igbts, freewheeling diodes for each igbt and one control ic. it has gate drive and pr otection functions. 2. inverter power side is composed of four inverter dc-link input terminals and three inverter output terminals. 3. inverter high-side is composed of three igbts, freewheeling diodes and three drive ics for each igbt. figure 3. com vcc in(ul) in(vl) in(w l) vfo c(fod) c(sc) out(ul) out(vl) out(w l) n u (21) n v (22) n w (23) u (24) v (25) w (26) p (27) (20) v s(w) (19) v b(w) (16) v s(v) (15) v b(v) (8) c sc (7) c fod (6) v fo (5) in (w l) (4) in (vl) (3) in (ul) (2) com (1) v cc(l) vcc vb out com vs in vb vs out in com vcc vcc vb out com vs in (18) v cc(wh) (17) in (w h) (14) v cc(vh) (13) in (vh) (12) v s(u) (11) v b(u) (10) v cc(uh) (9) in (uh) v sl
5 www.fairchildsemi.com fsbs15ch60 rev. c fsbs15ch60 smart power module absolute maximum ratings (t j = 25c, unless otherwise specified) inverter part note: 1. the maximum junction temperature rating of the power chips integrated within the spm is 150 c(@t c 100 c). however, to insure safe operation of the spm, the average junction temperature should be limited to t j(ave) 125 c (@t c 100 c) control part total system thermal resistance note: 2. for the measurement point of case temperature(t c ), please refer to figure 2. symbol parameter conditions rating units v pn supply voltage applied between p- n u , n v , n w 450 v v pn(surge) supply voltage (surge) applied between p- n u , n v , n w 500 v v ces collector-emitter voltage 600 v i c each igbt collector current t c = 25c 15 a i cp each igbt collector current (peak) t c = 25c, under 1ms pulse width 30 a p c collector dissipation t c = 25c per one chip 32 w t j operating junction temperature (note 1) -20 ~ 125 c symbol parameter conditions rating units v cc control supply voltage applied between v cc(uh) , v cc(vh) , v cc(wh) , v cc(l) - com 20 v v bs high-side control bias voltage applied between v b(u) - v s(u) , v b(v) - v s(v) , v b(w) - v s(w) 20 v v in input signal voltage applied between in (uh) , in (vh) , in (wh) , in (ul) , in (vl) , in (wl) - com -0.3~17 v v fo fault output supply voltage applied between v fo - com -0.3~v cc +0.3 v i fo fault output current sink current at v fo pin 5 ma v sc current sensing input voltage applied between c sc - com -0.3~v cc +0.3 v symbol parameter conditions rating units v pn(prot) self protection supply voltage limit (short circuit protection capability) v cc = v bs = 13.5 ~ 16.5v t j = 125c, non-repetitive, less than 2 s 400 v t c module case operation temperature -20 c t j 125 c, see figure 2 -20 ~ 100 c t stg storage temperature -40 ~ 125 c v iso isolation voltage 60hz, sinusoidal, ac 1 minute, connection pins to ceramic substrate 2500 v rms symbol parameter conditios min. typ. max. units r th(j-c)q junction to case thermal resistance inverter igbt part (per 1/6 module) - - 3.1 c/w r th(j-c)f inverter fwd part (per 1/6 module) - - 3.6 c/w
6 www.fairchildsemi.com fsbs15ch60 rev. c fsbs15ch60 smart power module electrical characteristics (t j = 25c, unless otherwise specified) inverter part note: 3. t on and t off include the propagation delay time of the internal drive ic. t c(on) and t c(off) are the switching time of igbt itself under the given gate driving condition internally. for the detailed information, please see figure 4. figure 4. switching time definition symbol item condition min. typ. max. units v ce(sat) collector-emitter saturation voltage v cc = v bs = 15v v in = 5v i c = 15a, t j = 25c - - 2.3 v v f fwd forward voltage v in = 0v i c =15a, t j = 25c - - 2.1 v hs t on switching times v pn = 300v, v cc = v bs = 15v i c = 15a v in = 0v ? 5v, inductive load (note 3) -0.4- s t c(on) -0.28- s t off -0.67- s t c(off) -0.35- s t rr -0.10- s ls t on v pn = 300v, v cc = v bs = 15v i c = 15a v in = 0v ? 5v, inductive load (note 3) -0.55- s t c(on) -0.24- s t off -0.73- s t c(off) -0.34- s t rr -0.10- s i ces collector-emitter leakage current v ce = v ces - - 250 a v ce i c v in t on t c(on) v in(on) 10% i c 10% v ce 90% i c 100% i c t rr 100% i c 0 v ce i c v in t off t c(off) v in(off) 10% v ce 10% i c (a) turn-on (b) turn-off
7 www.fairchildsemi.com fsbs15ch60 rev. c fsbs15ch60 smart power module electrical characteristics (t j = 25c, unless otherwise specified) control part note: 4. short-circuit current protection is functioning only at the low-sides. 5. the fault-out pulse width t fod depends on the capacitance value of c fod according to the following approximate equation : c fod = 18.3 x 10 -6 x t fod [f] recommended operating conditions symbol parameter conditions min. typ. max. units i qccl quiescent v cc supply current v cc = 15v in (ul, vl, wl) = 0v v cc(l) - com - - 23 ma i qcch v cc = 15v in (uh, vh, wh) = 0v v cc(uh) , v cc(vh) , v cc(wh) - com - - 100 a i qbs quiescent v bs supply current v bs = 15v in (uh, vh, wh) = 0v v b(u) - v s(u) , v b(v) -v s(v) , v b(w) - v s(w) - - 500 a v foh fault output voltage v sc = 0v, v fo circuit: 4.7k ? to 5v pull-up 4.5 - - v v fol v sc = 1v, v fo circuit: 4.7k ? to 5v pull-up - - 0.8 v v sc(ref) short circuit trip level v cc = 15v (note 4) 0.45 0.5 0.55 v uv ccd supply circuit under- voltage protection detection level 10.7 11.9 13.0 v uv ccr reset level 11.2 12.4 13.2 v uv bsd detection level 10.1 11.3 12.5 v uv bsr reset level 10.5 11.7 12.9 v t fod fault-out pulse width c fod = 33nf (note 5) 1.0 1.8 - ms v in(on) on threshold voltage applied between in (uh) , in (vh) , in (wh) , in (ul) , in (vl) , in (wl) - com 3.0--v v in(off) off threshold voltage - - 0.8 v symbol parameter conditions value units min. typ. max. v pn supply voltage applied between p - n u , n v , n w - 300 400 v v cc control supply voltage applied between v cc(uh) , v cc(vh) , v cc(wh) , v cc(l) - com 13.5 15 16.5 v v bs high-side bias voltage applied between v b(u) - v s(u) , v b(v) - v s(v) , v b(w) - v s(w) 13.0 15 18.5 v dv cc /dt, dv bs /dt control supply variation -1 - 1 v/ s t dead blanking time for preventing arm-short for each input signal 2.0 - - s f pwm pwm input signal -20 c t c 100c, -20 c t j 125c - - 20 khz v sen voltage for current sensing applied between n u , n v , n w - com (including surge voltage) -4 4 v
8 www.fairchildsemi.com fsbs15ch60 rev. c fsbs15ch60 smart power module mechanical characteristics and ratings figure 5. flatness measurement position parameter conditions limits units min. typ. max. mounting torque mounting screw: - m3 recommended 0.62n?m 0.51 0.62 0.72 n?m device flatness note figure 5 0 - +120 m weight - 15.4 - g ( + ) ( + ) ( + ) ( + )
9 www.fairchildsemi.com fsbs15ch60 rev. c fsbs15ch60 smart power module time charts of spms protective function a1 : control supply voltage rises: after the voltage rises uv ccr , the circuits start to operate when next input is applied. a2 : normal operation: igbt on and carrying current. a3 : under voltage detection (uv ccd ). a4 : igbt off in spite of control input condition. a5 : fault output operation starts. a6 : under voltage reset (uv ccr ). a7 : normal operation: igbt on and carrying current. figure 6. under-voltage protection (low-side) b1 : control supply voltage rises: after the voltage reaches uv bsr , the circuits start to operate when next input is applied. b2 : normal operation: igbt on and carrying current. b3 : under voltage detection (uv bsd ). b4 : igbt off in spite of control input condition, but there is no fault output signal. b5 : under voltage reset (uv bsr ) b6 : normal operation: igbt on and carrying current figure 7. under-voltage protection (high-side) input signal output current fault output signal control supply voltage reset uv ccr protection circuit state set reset uv ccd a1 a3 a2 a4 a6 a5 a7 input signal output current fault output signal control supply voltage reset uv bsr protection circuit state set reset uv bsd b1 b3 b2 b4 b6 b5 high-level (no fault output)
10 www.fairchildsemi.com fsbs15ch60 rev. c fsbs15ch60 smart power module (with the external shunt resistance and cr connection) c1 : normal operation: igbt on and carrying current. c2 : short circuit current detection (sc trigger). c3 : hard igbt gate interrupt. c4 : igbt turns off. c5 : fault output timer operation starts: the pulse width of the fault output signal is set by the external capacitor c fo . c6 : input ?l? : igbt off state. c7 : input ?h?: igbt on state, but during the active period of fault output the igbt doesn?t turn on. c8 : igbt off state figure 8. short-circuit current protection (low-side operation only) internal igbt gate-emitter voltage lower arms control input output current sensing voltage of the shunt resistance fault output signal sc reference voltage cr circuit time constant delay sc protection circuit state set reset c6 c7 c3 c2 c1 c8 c4 c5
11 www.fairchildsemi.com fsbs15ch60 rev. c fsbs15ch60 smart power module note: 1. rc coupling at each input (parts shown dotted) might change depending on the pwm control scheme used in the application and the wiring impedance of the application?s printed circuit board. the spm input signal section integrates 3.3k ? ( typ.) pull-down resistor. therefore, when using an external filtering resistor, please pay attention to the sig- nal voltage drop at input terminal. 2. the logic input is compatible with standard cmos or lsttl outputs. figure 9. recommended cpu i/o interface circuit note: 1. it would be recommended that the bootstrap diode, d bs , has soft and fast recovery characteristics. 2. the bootstrap resistor (r bs ) should be 3 times greater than r e(h) . the recommended value of r e(h) is 5.6 ? , but it can be increased up to 20 ? (maximum) for a slower dv/dt of high-side. 3. the ceramic capacitor placed between v cc -com should be over 1uf and mounted as close to the pins of the spm as possible. figure 10. recommended bootstrap operation circuit and parameters cpu com 5v-line 1nf ? 4.7k ,, in (ul) in (vl) in (wl) ,, in (uh) in (vh) in (w h) v fo ? 100 1nf spm r pf = c pf = 15v-line 22uf 0.1uf 1000uf 1uf one-leg diagram of spm vcc in com vb ho vs vcc in com out inverter output p n these values depend on pwm control algorithm d bs r bs r e(h) v sl
12 www.fairchildsemi.com fsbs15ch60 rev. c fsbs15ch60 smart power module note: 1. to avoid malfunction, the wiring of each input should be as short as possible. (less than 2-3cm) 2. by virtue of integrating an application specific type hvic inside the spm, direct coupling to cpu terminals without any opto -coupler or transformer isolation is possible. 3. v fo output is open collector type. this signal line should be pulled up to the positive side of the 5v power supply with approxim ately 4.7k ? resistance. please refer to figure. 9. 4. c sp15 of around 7 times larger than bootstrap capacitor c bs is recommended. 5. v fo output pulse width should be determined by connecting an external capacitor(c fod ) between c fod (pin7) and com(pin2). (example : if c fod = 33 nf, then t fo = 1.8 ms (typ.)) please refer to the note 5 for calculation method. 6. input signal is high-active type. there is a 3.3k ? resistor inside the ic to pull down each input signal line to gnd. when employing rc coupling circuits, set up such rc couple that input signal agree with turn-off/turn-on threshold voltage. 7. to prevent errors of the protection function, the wiring around r f and c sc should be as short as possible. 8. in the short-circuit protection circuit, please select the r f c sc time constant in the range 1.5~2 s. 9. each capacitor should be mounted as close to the pins of the spm as possible. 10. to prevent surge destruction, the wiring between the smoothing capacitor and the p&gnd pins should be as short as possible . the use of a high frequency non-inductive capacitor of around 0.1~0.22 uf between the p&gnd pins is recommended. 11. relays are used at almost every systems of electrical equipments of home appliances. in these cases, there should be suffi cient distance between the cpu and the relays. 12. c spc15 should be over 1uf and mounted as close to the pins of the spm as possible. figure 11. typical application circuit fault 15v line c bs c bsc r bs d bs c bs c bsc r bs d bs c bs c bsc r bs d bs c sp15 c spc15 c fod 5v line r pf c bpf r s m vdc c dcs gating uh gating vh gating wh gating wl gating vl gating ul c pf c c c c p p p p u u u u r fu r fv r fw r su r sv r sw c fu c fv c fw w-phase current v-phase current u-phase current r f com vcc in(ul) in(vl) in(wl) vfo c(fod) c(sc) out(ul) out(vl) out(wl) n u (21) n v (22) n w (23) u (24) v (25) w (26) p (27) (20) v s(w) (19) v b(w) (16) v s(v) (15) v b(v) (8) c sc (7) c fod (6) v fo (5) in (wl) (4) in (vl) (3) in (ul) (2) com (1) v cc(l) vcc vb out com vs in vb vs out in com vcc vcc vb out com vs in (18) v cc(wh) (17) in (wh) (14) v cc(vh) (13) in (vh) (12) v s(u) (11) v b(u) (10) v cc(uh) (9) in (uh) input signal for short- circuit protection c sc r e(uh) v sl r e(vh) r e(wh)
13 www.fairchildsemi.com fsbs15ch60 rev. c fsbs15ch60 smart power module detailed package outline drawings
14 www.fairchildsemi.com fsbs15ch60 rev. c fsbs15ch60 smart power module detailed package outline drawings (continued)
15 www.fairchildsemi.com fsbs15ch60 rev. c fsbs15ch60 smart power module detailed package outline drawings (continued)
trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intend ed to be an exhaustive list of all such trademarks. 16 www.fairchildsemi.com fsbs15ch60 rev. c fsbs15ch60 smart power module disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? unifet? vcx? a cex? activearray? bottomless? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? across the board. around the world.? the power franchise ? programmable active droop? rev. i15

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